下面以CY9C6264-70ZI芯片解密为例，阐述其简单特性指标供客户参考；
Features
? 100% form, fit, function compatible with 8K × 8
micropower SRAM CY6264
- Fast Read and Write access: 70 ns
- Voltage range: 4.5V-5.5V operation
- Low active power: 330 mW (max.)
- Low standby power, CMOS: 495 ?W (max.)
- Easy memory expansion with CE and OE features
- TTL-compatible inputs and outputs
- Automatic power-down when deselected
? Replaces 8K × 8 Battery Backed (BB) SRAM, SRAM,
EEPROM, FeRAM, or Flash memory
? Data is automatically Write protected during power loss
? Write cycle endurance: >1015 cycles
? Data Retention: >10 Years
? Shielded from external magnetic fields
? Extra 64-bytes for device identification and tracking
? Temperature ranges
- Commercial: 0°C to 70°C
Industrial: -40°C to +85°C
? JEDEC STD 28-pin DIP (600-mil), 28-pin (300-mil) SOIC
and 28-pin TSOP-1 packages. Also available in 450-mil
wide (300-mil body width) 28-pin narrow SOIC.
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需要解密的朋友可以联系我们，我们长期接芯片解密pcb抄板等等跟电子产品有关系的产品
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